Penalized maximum likelihood and semiparametric second-order efficiency

We consider the problem of estimation of a shift parameter of an unknown symmetric function in Gaussian white noise. We introduce a notion of semiparametric second-order efficiency and propose estimators that are semiparametrically efficient and second-order efficient in our model. These estimators are of a penalized maximum likelihood type with an appropriately chosen penalty. We argue that second-order efficiency is crucial in semiparametric problems since only the second-order terms in asymptotic expansion for the risk account for the behavior of the ``nonparametric component'' of a semiparametric procedure, and they are not dramatically smaller than the first-order terms.Comment: Published at http://dx.doi.org/10.1214/009053605000000895 in the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

Evidence for magnetoplasmon character of the cyclotron resonance response of a two-dimensional electron gas

Experimental results on the absolute magneto-transmission of a series of high density, high mobility GaAs quantum wells are compared with the predictions of a recent magnetoplasmon theory for values of the filling factor above 2. We show that the magnetoplasmon picture can explain the non-linear features observed in the magnetic field evolution of the cyclotron resonance energies and of the absorption oscillator strength. This provides experimental evidence that inter Landau level excitations probed by infrared spectroscopy need to be considered as many body excitations in terms of magnetoplasmons: this is especially true when interpreting the oscillator strengths of the cyclotron transitions

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Strong Electron Tunneling through a Small Metallic Grain

Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result (i) contributions of all -- including high energy -- charge states become important and (ii) excited charge states become broadened and essentially overlap. At the same time the grain charge remains discrete and the system conductance $e$-periodically depends on the gate charge. We develop a nonperturbative approach which accounts for all these features and calculate the temperature dependent conductance of the system in the strong tunneling regime at different values of the gate charge.Comment: revtex, 8 pages, 2 .ps figure

A Langevin analysis of fundamental noise limits in Coherent Anti-Stokes Raman Spectroscopy

We use a Langevin approach to analyze the quantum noise in Coherent Anti-Stokes Raman Spectroscopy (CARS) in several experimental scenarios: with continuous wave input fields acting simultaneously and with fast sequential pulsed lasers where one field scatters off the coherence generated by other fields; and for interactions within a cavity and in free space. In all the cases, the signal as well as the quantum noise due to spontaneous decay and decoherence in the medium are shown to be described by the same general expression. Our theory in particular shows that for short interaction times, the medium noise is not important and the efficiency is limited only by the intrinsic quantum nature of the photon. We obtain fully analytic results \emph{without} making an adiabatic approximation, the fluctuations of the medium and the fields are self solved consistently.Comment: 12 pages, 1 figur

Electron transport through interacting quantum dots

We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende

Coulomb Interaction and Quantum Transport through a Coherent Scatterer

An interplay between charge discreteness, coherent scattering and Coulomb interaction yields nontrivial effects in quantum transport. We derive a real time effective action and an equivalent quantum Langevin equation for an arbitrary coherent scatterer and evaluate its current-voltage characteristics in the presence of interactions. Within our model, at large conductances $G_0$ and low $T$ (but outside the instanton-dominated regime) the interaction correction to $G_0$ saturates and causes conductance suppression by a universal factor which depends only on the type of the conductor.Comment: 4 pages, no figure

Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis

We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the free energy of this system and the average charge on the island as a function of an external bias voltage. In much of the parameter range an extrapolation to the ground state is possible. Our results for the effective charging energy for strong tunneling are compared to earlier -- in part controversial -- theoretical predictions and Monte Carlo simulations

Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$\Omega$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $\Delta V_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $\Delta G$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure

Charge Fluctuations in the Single Electron Box

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance. Near the degeneracy point where the energy of two charge states coincides, the perturbative approach fails, and we explicitly resum the leading logarithmic divergencies to all orders. The predictions for zero temperature are compared with Monte Carlo data and with recent renormalization group results. While good agreement between the third order result and numerical data justifies the perturbative approach in most of the parameter regime relevant experimentally, near the degeneracy point and at zero temperature the resummation is shown to be insufficient to describe strong tunneling effects quantitatively. We also determine the charge noise spectrum employing a projection operator technique. Former perturbative and semiclassical results are extended by the approach.Comment: 20 pages, 15 figure